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參數(shù)資料
| 型號： | VNH100N04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Fully Autoprotected Power MOSFET(全自動保護功率MOSFET) |
| 中文描述： | 充分Autoprotected功率MOSFET（全自動保護功率MOSFET的） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | VNH100N04 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 30 A
R
gen
= 10
100
400
900
400
TBD
TBD
TBD
TBD
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
T
j
= 125
o
C
(see figure 3)
I
d
= 30 A
R
gen
= 10
TBD
TBD
TBD
TBD
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
A/
μ
s
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 30 A
R
gen
= 1000
TBD
TBD
TBD
TBD
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 12 V
I
D
= 30 A
TBD
Q
g
Total Gate Charge
I
D
= 30 A
V
in
= 10 V
TBD
nC
SOURCE DRAIN DIODE
Symbol
V
SD
(
)
t
rr
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward On Voltage
I
SD
= 30 A
V
in
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
TBD
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 30 A
V
DD
= V
(see test circuit, figure 5)
TBD
TBD
TBD
ns
μ
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
DS
= 13 V
70
100
140
A
t
dlim
Step Response
Current Limit
Overtemperature
Shutdown
Overtemperature Reset
V
in
= 10 V
V
DS
= 13V
TBD
μ
s
T
jsh
150
170
190
o
C
T
jrs
135
o
C
I
gf
Fault Sink Current
V
in
= 10 V
starting T
j
= 25
o
C
V
in
= 10 V R
gen
= 1 K
V
DS
= 13 V
50
mA
E
as
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = mH
TBD
J
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
VNH100N04
3/7
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