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參數(shù)資料
| 型號： | VND5N07 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | "OMNIFET": Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
| 中文描述： | “OMNIFET”：充分Autoprotected功率MOSFET（全自動(dòng)保護(hù)功率MOSFET的） |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 166K |
| 代理商： | VND5N07 |
ELECTRICAL CHARACTERISTICS
(continued)
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Output Capacitance
V
DS
= 13 V
I
D
= 2.5 A
3
4
S
C
oss
VDS = 13 V
f = 1 MHz
V
in
= 0
200
300
pF
SWITCHING (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 2.5 A
R
gen
= 10
50
60
150
40
100
100
300
80
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 2.5 A
R
gen
= 1000
150
400
3900
1100
250
600
5000
1600
ns
ns
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 12 V
I
D
= 2.5 A
R
gen
= 10
I
D
= 2.5 A
80
A/
μ
s
Q
i
Total Input Charge
V
in
= 10 V
18
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
t
rr
(
)
Forward On Voltage
I
SD
= 2.5 A
V
in
= 0
di/dt = 100 A/
μ
s
T
j
= 25
o
C
1.6
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2.5 A
V
DD
= 30 V
(see test circuit, figure 5)
150
0.3
5.7
ns
μ
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
3.5
3.5
5
5
7
7
A
A
μ
s
μ
s
o
C
t
dlim
(
)
Step Response
Current Limit
15
40
20
60
T
jsh
(
)
Overtemperature
Shutdown
Overtemperature Reset
150
T
jrs
(
)
I
gf
(
)
135
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = 10 mH
R
gen
= 1 K
0.2
J
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
3/14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VND5N07 | 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH D-PAK |
| VND5N07_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET IIfully autoprotected Power MOSFET |
| VND5N07-1 | 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VND5N0713TR | 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VND5N0713TR-E | 制造商:STMicroelectronics 功能描述: |
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