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參數(shù)資料
| 型號： | VNB35NV04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAPACITOR,CLASSX21000NF275VAC |
| 中文描述： | “OMNIFET二”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 139K |
| 代理商： | VNB35NV04 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING
(
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 28 V
V
gen
= 10 V
(see figure 3)
I
d
= 18 A
R
gen
= 10
100
350
650
200
200
600
1000
350
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 28 V
V
gen
= 10 V
(see figure 3)
I
d
= 18 A
R
gen
= 1000
500
2.7
10
4.3
800
4.2
16
6.5
ns
μ
s
μ
s
μ
s
A/
μ
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 28 V
V
in
= 10 V
V
DD
= 12 V
I
D
= 18 A
R
gen
= 10
I
D
= 18 A
60
Q
i
Total Input Charge
V
in
= 10 V
100
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
t
rr
(
)
Forward On Voltage
I
SD
= 18 A
V
in
= 0
1.6
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 18 A
V
DD
= 30 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 25
C
250
1
8
ns
μ
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
25
25
35
35
45
45
A
A
μ
s
μ
s
o
C
t
dlim
(
)
Step Response
Current Limit
35
70
60
140
T
jsh
(
)
Overtemperature
Shutdown
Overtemperature Reset
150
T
jrs
(
)
I
gf
(
)
135
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = 10 mH
R
gen
= 1 K
2.5
J
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VNP35N07FI-VNB35N07-VNV35N07
3/13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNB35NV0413TR | 功能描述:電源開關(guān) IC - 配電 N-Ch 70V 35A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNB35NV04-E | 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNB35NV04TR-E | 功能描述:電源開關(guān) IC - 配電 N-Ch 70V 35A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNB3-DUK00197 | 制造商:SMC Corporation of America 功能描述:Valve, Media, 2 way, VNB304CS-NYA-X327), .05" bypass |
| VNB401BS-N25A-X5 | 制造商:SMC Corporation of America 功能描述:PROCESS VALVE, 1INCH NPT |
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