- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359784 > VN750STR-E (意法半導體) HIGH SIDE DRIVER PDF資料下載
參數(shù)資料
| 型號： | VN750STR-E |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH SIDE DRIVER |
| 中文描述： | 高邊驅(qū)動器 |
| 文件頁數(shù)： | 9/31頁 |
| 文件大?。?/td> | 416K |
| 代理商： | VN750STR-E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
9/31
VN750-E / VN750S-E / VN750PT-E / VN750B5-E
Figure 8. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / (I
S(on)max
).
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
S(on)max
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
GND
will
produce a shift (I
S(on)max
* R
GND
) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
GND
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
PROTECTION
NETWORK
AGAINST
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
CC
max DC rating.
The same applies if the device will be subject to
transients on the V
CC
line that are greater than the ones
shown in the ISO T/R 7637/1 table.
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the V
CC
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of
μ
C I/Os.
-V
CCpeak
/I
latchup
≤
R
prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
≥
20mA; V
OH
μ
C
≥
4.5V
5k
≤
R
prot
≤
65k
.
Recommended R
prot
value is 10k
.
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μ
C
+5V
R
prot
V
GND
STATUS
INPUT
+5V
R
prot
相關PDF資料 |
PDF描述 |
|---|---|
| VIPER50A-E | SMPS PRIMARY I.C |
| VIPER50ASP-E | SMPS PRIMARY I.C |
| V911AY | Rail-to-rail input/output 8MHz operational amplifiers |
| V911I | Rail-to-rail input/output 8MHz operational amplifiers |
| V911IY | Rail-to-rail input/output 8MHz operational amplifiers |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN751PT | 功能描述:功率驅(qū)動器IC Hi side driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN751PT_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High side driver |
| VN751PT13TR | 功能描述:功率驅(qū)動器IC Hi side driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN751PT13TR-CUT TAPE | 制造商:ST 功能描述:VN751PT Series 36 V 60 mOhm Surface Mount Single High Side Driver - PPAK-5 |
| VN751S | 功能描述:功率驅(qū)動器IC Hi side driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。