- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359785 > VN21(011Y) (意法半導(dǎo)體) Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | VN21(011Y) |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| 中文描述： | 標準高邊智能電源固態(tài)繼電器 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 189K |
| 代理商： | VN21(011Y) |
FUNCTIONAL DESCRIPTION
The
device has
indicates open load conditions in off state as well
as in on state, output shorted to V
CC
and
overtemperature. The truth table shows input,
diagnostic and
output
operation and in fault conditions.
signals
are
processed
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means
that
a
disconnection
operation, with a duration of less than 5 ms does
not
affect
the
status
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
povl
)in case
of overtemperature condition and a delay (t
pol
) in
case of open load. These feature fully comply
with
International
Standard
requirement for automotive High Side Driver.
To protect the device
against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off
minimum
junction
temperature
When the temperature returns to 125
switch is automatically turned on again. In short
circuit the protection reacts
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads,
an
a diagnostic output which
voltage level in normal
The output
by internal logic. The
during
normal
output.
Equally,
any
Office
(I.S.O.)
at
a
of 140
o
C.
o
C the
with
virtually no
internal function of the
device ensures the fast demagnetization with a
typical voltage(V
demag
) of -18V.
This function allows to greatly reduce the power
dissipation according to the formula:
P
dem
=0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequency and
V
demag
= demagnetization voltage
Based on this formula it is possible
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed V
CC
, V
demag
and f.
to know
PROTECTING
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II
(V
s
= 46.5V) according to the
ISO
T/R
7637/1
without
component. This means that all functions of the
device
are
performed
exposure to disturbance at level II. The VN21 is
able to withstand the test pulse No.5 at level III
adding an external resistor of 150 ohm between
pin 1 and ground plus a filter capacitor of 1000
μ
F between pin 3 and ground (if R
LOAD
≤
20
).
THE DEVICE AGAIST LOAD
any
external
as
designed
after
PROTECTING
REVERSE
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1(GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
– The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solution allows the use of a standard diode.
THE
DEVICE
AGAINST
BATTERY
Switching Time Waveforms
VN21
5/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN30N(011Y) | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| VN31(011Y) | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Blue; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| VNN1NV04 | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| VNS1NV04 | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| VNS3NV04 | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN21012Y | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN2106 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2106N3 | 功能描述:MOSFET 60V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2106N3-G | 功能描述:MOSFET 60V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2106N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。