參數(shù)資料
型號： VN05NSP
廠商： 意法半導(dǎo)體
英文描述： High Side Smart Power Solid State Relay(高邊智能化功率固態(tài)繼電器)
中文描述： 高邊智能電源固態(tài)繼電器（高邊智能化功率固態(tài)繼電器）
文件頁數(shù)： 4/9頁
文件大?。?/td> 97K
代理商： VN05NSP
ELECTRICAL CHARACTERISTICS
(continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
V
SCL
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Status Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
R
LOAD
< 10 m
6
-0.7
V
V
t
SC
Switch-off Time in
Short Circuit Condition
at Start-Up
Over Current
T
c
= 25
o
C
1.5
5
ms
I
OV
R
LOAD
< 10 m
R
LOAD
< 10 m
-40 T
c
125
o
C
T
c
= 85
o
C
60
A
I
AV
Average Current in
Short Circuit
Open Load Current
Level
Thermal Shut-down
Temperature
Reset Temperature
1.4
A
I
OL
5
180
mA
T
TSD
140
o
C
T
R
125
o
C
(*) The V
IH
is internally clamped at 6V about. Itis possible to connect this pin to an highervoltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(
) Status determination >100
μ
s after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a
indicates
open
temperature conditions. The output signals are
processedby internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integratedPower MOS off ata minimum
junction temperature of 140
temperature returns to about 125
o
C the switch is
automaticallyturnedon again.
In short circuit conditions the protection reacts
with virtuallyno delay, the sensor being locatedin
the regionof the die where the heat is generated.
diagnostic output which
circuit
(no
load)
and
over
o
C. When the
PROTECTING
REVERSEBATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottkydiode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
THE
DEVICE
AGAINST
The consequences of the voltage drop across
this diodeare as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respectto power GND).
The undervoltageshutdown level is increased by
V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standarddiode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotiveenvironment.
VN05NSP
4/9
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參數(shù)描述
VN06 功能描述:電源開關(guān) IC - 配電 High Side for SSR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VN06 026 0001 制造商:Amphenol Corporation 功能描述:
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VN06011Y 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ISO HIGH SIDE SMART POWER SOLID STATE RELAY
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