參數(shù)資料
型號(hào)： VN02HSP
廠商： 意法半導(dǎo)體
英文描述： High Side Smart Power Solid State Relay(高邊智能化功率固態(tài)繼電器)
中文描述： 高邊智能電源固態(tài)繼電器（高邊智能化功率固態(tài)繼電器）
文件頁數(shù)： 4/8頁
文件大小： 73K
代理商： VN02HSP
ELECTRICAL CHARACTERISTICS
(continued)
PROTECTION AND DIAGNOSTICS
Symbol
V
STAT
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Status Voltage Output
Low
Under Voltage Shut
Down
Status Clamp Voltage
I
STAT
= 1.6 mA
0.4
V
V
USD
2.5
5
V
V
SCL
(
)
I
STAT
= 10 mA
I
STAT
= -10 mA
R
LOAD
< 10 m
T
c
= 25
o
C
5.5
6
-0.7
-0.3
V
V
t
SC
Switch-off Time in
Short Circuit Condition
at Start-Up
Over Current
V
CC
= 13 V
1.5
5
ms
I
OV
R
LOAD
< 10 m
R
LOAD
< 10 m
T
c
= 85
C
9 < V
CC
< 32 V
V
CC
= 13 V
28
A
I
AV
Average Current in
Short Circuit
Open Load Current
Level
Leakage Current
V
CC
= 13 V
0.9
1.8
A
I
OL
5
70
mA
I
OUT
Off State
V
OUT
= 0 V
60
μ
A
o
C
T
TSD
Thermal Shut-down
Temperature
Reset Temperature
140
160
T
R
125
145
o
C
(*) The V
IH
is internally clamped at 6V about. Itis possible to connect this pin to an highervoltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(
)
Status determination > 100 ms after the switchingedge.
Note 1 : Above V
CC
= 36 V the outputvoltage is clampedto 36 V. Power dissipation increases and the device turns off ifjunction
temperature reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a
indicates
open
temperature conditions. The output signals are
processedby internallogic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integratedPower MOSoff at a minimum
junction temperature of 140
temperature returns to about 125
o
C the switch is
automatically turned on again. To ensur the
protection in all V
CC
conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above V
CC
= 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
diagnostic output which
circuit
(no
load)
and
over
o
C. When the
PROTECTING
REVERSEBATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
THE
DEVICE
AGAINST
insert a Schottkydiode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diodeare as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to powerGND).
-
The undervoltage shutdown level is increased
by V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotiveenvironment.
VN02HSP
4/8
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VN02HSP13TR 功能描述:電源開關(guān) IC - 配電 High Side Smart Powr RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VN02HSP-E 功能描述:功率驅(qū)動(dòng)器IC HIGH SIDE SMART POWR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VN02HSPTR-E 功能描述:功率驅(qū)動(dòng)器IC HIGH SIDE SMART POWR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VN02N 功能描述:電源開關(guān) IC - 配電 High Side Smart Powr RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
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