- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361731 > VG36643241BT-8 (VANGUARD INTERNATIONAL SEMICONDUCTOR CORP) CMOS Synchronous Dynamic RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | VG36643241BT-8 |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | CMOS Synchronous Dynamic RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP-86 |
| 文件頁數(shù)： | 1/72頁 |
| 文件大?。?/td> | 978K |
| 代理商： | VG36643241BT-8 |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
Document : 1G5-0099
Rev.1
Page 1
VIS
Preliminary VG3664321(4)1(2)BT
CMOS Synchronous Dynamic RAM
Description
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -
bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced
submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is
packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
Single 3.3V (
) power supply
High speed clock cycle time : 8/10 for LVTTL
High speed clock cycle time : 8/10 for SSTL - 3
Fully synchronous with all signals referenced to a positive clock edge
Programmable CAS Iatency (2,3)
Programmable burst length (1,2,4,8,& Full page)
Programmable wrap sequence (Sequential/Interleave)
Automatic precharge and controlled precharge
Auto refresh and self refresh modes
Dual Internal banks controlled by A11 (Bank select) for VG36643211(2)
Quad Internal banks controlled by A11 & A12 (Bank select) for VG36643241(2)
Each Banks can operate simultaneously and independently
LVTTL compatible I/O interface for VG36643211 and VG36643241
SSTL - 3 compatible I/O interface for VG36643212 and VG36643242
Random column access in every cycle
x32 organization
Input/Output controlled by DQM0 ~ 3
4,096 refresh cycles/64ms
Burst termination by burst stop and precharge command
Burst read/single write option
0.3V
±
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VG36646141BT-10 | 4-PORT ADVANCED CONSOLE SERVER |
| VG36646141BT-7 | CMOS Synchronous Dynamic RAM |
| VG36646141BT-8 | CMOS Synchronous Dynamic RAM |
| VG36648041BT-8H | x8 SDRAM |
| VG36648041BT-8L | x8 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VG366440(80/16)41DT(L)-6 | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG366440(80/16)41DT(L)-7 | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG366440(80/16)41DT(L)-7L | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG366440(80/16)41DT(L)-8H | 制造商:VML 制造商全稱:VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36644041DT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous Dynamic RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。