參數(shù)資料
型號: VG26VS17405J-5
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, SOJ-26/24
文件頁數(shù): 22/27頁
文件大?。?/td> 244K
代理商: VG26VS17405J-5
Document:1G5-0162
Rev.1
Page 4
VIS
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
TRUTH TABLE
Notes: 1. EARLY WRITE only.
FUNCTION
RAS
CAS
WE
OE
ADDRESSES
DQS
Notes
ROW
COL
STANDBY
H
X
High-Z
READ
L
H
L
ROW
COL
Data-Out
WRITE: (EARLY WRITE )
L
X
ROW
COL
Data-ln
READ WRITE
L
ROW
COL
Data-Out,Data-ln
EDO-PAGE-
MODE READ
1st Cycle
L
H
L
ROW
COL
Data-Out
2nd Cycle
L
H
L
n/a
COL
Data-Out
EDO-PAGE
MODE WRITE
1st Cycle
L
X
ROW
COL
Data-In
2nd Cycle
L
X
n/a
COL
Data-In
EDO-
PAGE-MODE
READ-WRITE
1st Cycle
L
ROW
COL
Data-Out, Data-In
2nd Cycle
L
n/a
COL
Data-Out, Data-In
HIDDEN
REFRESH
READ
L
H
L
ROW
COL
Data-Out
WRITE
L
X
ROW
COL
Data-In
1
RAS-ONLY REFRESH
L
H
X
ROW
n/a
High-Z
CBR REFRESH
L
H
X
High-Z
H
X
H
L
L
H
H
L
H
L
H
L
H
L
H
L
H
L
L
H
H
L
H
L
L
H
LH
L
→ →
LH
L
→ →
H
L
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