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參數(shù)資料
| 型號： | VG26VS17405FJ |
| 廠商： | Vanguard International Semiconductor Corporation |
| 英文描述： | 4,194,304 x 4 - Bit CMOS Dynamic RAM |
| 中文描述： | 4194304 × 4 -位CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大小： | 244K |
| 代理商： | VG26VS17405FJ |
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Document:1G5-0162
Rev.1
Page 1
VIS
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Description
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ.
Features
Single 5V(
%) or 3.3V(+10%,-5%) only power supply
High speed t
RAC
acess time: 50/60ns
Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
Extended - data - out(EDO) page mode access
I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
10
±
相關(guān)PDF資料 |
PDF描述 |
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| VG26VS17400E | 4,194,304 x 4 - Bit CMOS Dynamic RAM |
| VG26V17400EJ-5 | PLUG, 56 WAYPLUG, 56 WAY; Ways, No. of:56; Colour:Grey; Contacts, No. of:56; Current rating:8.5A; Dielectric strength, VAC:1800V; Poles, No. of:56; Resistance, insulation:5000MR; Voltage, working:125V |
| VG26S17400EJ-5 | SOCKET, 56 WAYSOCKET, 56 WAY; Ways, No. of:56; Colour:Grey; Current rating:8.5A; Dielectric strength, VAC:1800V; Resistance, insulation:5000MR; Voltage, working:125V |
| VG26V17400EJ-6 | 4,194,304 x 4 - Bit CMOS Dynamic RAM |
| VG26S17400EJ-6 | 4,194,304 x 4 - Bit CMOS Dynamic RAM |
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