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參數(shù)資料
| 型號： | VG26VS17400FJ |
| 廠商： | Vanguard International Semiconductor Corporation |
| 英文描述： | 4,194,304 x 4 - Bit CMOS Dynamic RAM |
| 中文描述： | 4194304 × 4 -位CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大?。?/td> | 208K |
| 代理商： | VG26VS17400FJ |
Document :
Rev.
Page 1
VIS
VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Description
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated
with an advanced submicron CMOS technology and designed to operate from a single 5V only
or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin
plastic SOJ or TSOP (II).
Features
Single 5V (
%) or 3.3V (+10%,-5%) only power supply
High speed t
RAC
access time : 50/60 ns
Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
Fast Page Mode access
I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
10
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