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參數(shù)資料
| 型號(hào)： | VFT45-28 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF POWER MOSFET N-Channel Enhancement Mode |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 18K |
| 代理商： | VFT45-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
DSS
I
D
= 100 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
= 25 mA
g
fs
I
D
= 1 A
NONE
TEST CONDITIONS
MINIMUM
60
TYPICAL
MAXIMUM
UNITS
V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
5.0
mA
1.0
m
A
1.0
6.0
V
700
mS
C
iss
C
oss
C
rss
V
DS
= 28 V
V
GS
= 0 V
f = 1.0 MHz
52
87
8
pF
P
G
h
D
V
DD
= 28 V
F = 175 MHz
V
SWR
= 30:1
AT ALL PHASE
ANGLES
I
DQ
= 25 mA P
out
= 45 W
12
50
15
60
dB
%
y
NO DEGRADATION IN OUTPUT POWER
VHF POWER MOSFET
N-Channel Enhancement Mode
VFT45-28
DESCRIPTION:
The
VFT80-28
is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
FEATURES:
P
G
= 10 dB Typical at 175 MHz
30:1 Load VSWR
Capability
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
q
JC
7.0 A
60 V
60 V
±
20 V
100 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.8
O
C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10704
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
I
.160 / 4.06
.180 / 4.57
.280 / 7.11
DIM
.220 / 5.59
.785 / 19.94
.720 / 18.29
.230 / 5.84
.105 / 2.67
.085 / 2.16
J
.240 / 6.10
.255 / 6.48
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.730 / 18.54
S
S
D
G
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| VFT5-28 | 制造商:ASI 制造商全稱:ASI 功能描述:VHF POWER MOSFET |
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