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參數(shù)資料
| 型號： | VCR2N |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | JFET Voltage-Controlled Resistor(最大柵源擊穿電壓-7V，最大導(dǎo)通電阻60Ω的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 結(jié)型場效應(yīng)管壓控電阻（最大柵源擊穿電壓在- 7V，最大導(dǎo)通電阻60Ω的?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 37K |
| 代理商： | VCR2N |
VCR2N/4N/7N
2
Siliconix
S-52424—Rev. D, 14-Apr-97
Absolute Maximum Ratings
a
Gate-Source, Gate-Drain Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . .
–25 V
10 mA
300 mW
. . . . . . . . . . . . . . . . . . . . . . . .
–55 to 175 C
–65 to 200 C
. . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
300 C
. . . . . . . . . . . . .
Notes:
a.
b.
T
A
= 25 C unless otherwise noted.
Derate 2 mW/ C above 25 C.
Specifications
a
Limits
VCR2N
VCR4N
VCR7N
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–55
–25
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 A
–3.5
–7
–3.5
–7
–2.5
–5
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–5
–0.2
–0.1
nA
V
GS
= 0 V, I
D
= 10 mA
20
60
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
200
600
V
GS
= 0 V, I
D
= 0.1 mA
4000
8000
Gate-Source Forward Voltage
V
GS(F)
V
DS
= 0 V, I
G
= 1 mA
0.7
V
Dynamic
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
20
60
200
600
4000
8000
Drain-Gate Capacitance
C
dg
V
GD
= –10 V, I
S
= 0 mA
f = 1 MHz
7.5
3
1.5
pF
Source-Gate Capacitance
C
sg
V
GS
= –10 V, I
D
= 0 mA
f = 1 kHz
7.5
3
1.5
Notes:
a.
b.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NCB
NPA
NT
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