參數(shù)資料
型號(hào)： VCR11N
廠商： InterFET Corporation
英文描述： N-Channel Silicon Voltage Controlled Resistor JFET
中文描述： N溝道硅壓控電阻場(chǎng)效應(yīng)
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 88K
代理商： VCR11N
C-10
01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET
￥ Small Signal Attenuators
￥ Filters
￥ Amplifier Gain Control
￥ Oscillator Amplitude Control
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 15 V
10 mA
300 mW
2.4 mW/°C
TOD71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
At 25°C free air temperature:
Static Electrical Characteristics
VCR11N
Process NJ26
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
V
GS(OFF)
r
DS(MIN)
r
DS(MAX)
– 25
V
nA
V
I
G
= – 1 μA, V
DS
= V
V
GS
= – 15V, V
DS
= V
I
D
= 1 μA, V
DS
= – 10V
V
DS
= 100mV, r
DS1
= 200
V
GS1
= V
GS2
, r
DS1
= 2 k
– 0.2
– 12
1
1
– 8
.95
.95
Static Drain Source ON Resistance Ratio
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
r
ds(on)
C
dg
C
sg
70
200
7.5
7.5
pF
pF
V
GS
= V, I
D
= A
V
DG
= 10V, I
S
= A
V
GS
= 10V, I
D
= A
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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