參數(shù)資料
型號(hào)： VBP104FASR
廠商： VISHAY SEMICONDUCTORS
元件分類： 光敏二極管
英文描述： Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN
中文描述： Photodiodes 60V 215mW 65Deg
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 154K
代理商： VBP104FASR
VBP104FAS, VBP104FASR
Vishay Semiconductors
www.vishay.com
Rev. 1.2, 24-Aug-11
1
Document Number: 81169
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon PIN Photodiode
DESCRIPTION
VBP104FAS and VBP104FASR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 4.4 mm
2
sensitive area and
a daylight blocking filter matched with IR emitters operating
at wavelength 870 nm or 950 nm.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
Radiant sensitive area (in mm
2
): 4.4
High radiant sensitivity
Daylight blocking filter matched with 870 nm to
950 nm emitters
Fast response times
Angle of half sensitivity:
= ± 65°
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Hologen-free according to IEC 61249-2-21 definition
APPLICATIONS
High speed detector for infrared radiation
Infrared
remote
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
control
and
free
air
data
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
21726-1
VBP104FAS
VBP104FASR
PRODUCT SUMMARY
COMPONENT
V
BP104FAS
V
BP104FASR
I
ra
(μA)
35
35
(deg)
± 65
± 65
λ
0.5 (nm)
780 to 1050
780 to 1050
ORDERING INFORMATION
ORDERING CODE
V
BP104FAS
V
BP104FASR
PACKAGING
Tape and reel
Tape and reel
REMARKS
PACKAGE FORM
Gullwing
Reverse gullwing
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
T
amb
≤
25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Acc. reflow sloder profile fig. 8
Thermal resistance junction/ambient
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
相關(guān)PDF資料
PDF描述
VBP104S Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN
VBP104SR Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN
VBPW34FASR Photo Diode, PHOTO DIODE, 6.40 X 3.90 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN
VBPW34FAS Photo Diode, PHOTO DIODE, 6.40 X 3.90 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN
VBPW34SR Photo Diode, PHOTO DIODE, 6.40 X 3.90 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VBP104S 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長(zhǎng):565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5
VBP104S_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode
VBP104SR 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長(zhǎng):565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5
VBP-HH1-V3.0-110V 制造商:PEPPERL+FUCHS 功能描述:Interface, AS-Interface 制造商:PEPPERL+FUCHS 功能描述:AS-Interface (excluding sensors)
VBPW34FAS 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長(zhǎng):565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*