參數(shù)資料
型號(hào): V827464N24SCIX-D3
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184
封裝: GREEN, DIMM-184
文件頁(yè)數(shù): 13/17頁(yè)
文件大?。?/td> 370K
代理商: V827464N24SCIX-D3
ProMOS TECHNOLOGIES
V827464N24SC
5
V827464N24SC Rev. 1.2 April 2006
Serial Presence Detect Information
Bin Sort:
D0 (PC3200 @ CL 2.5-3-3)
D3 (PC3200 @ CL 3-3-3 )
C0 (PC2700 @ CL 2.5-3-3)
Byte #
Function described
Function Supported
Hex value
D0
D3
C0
D0
D3
C0
0
Defines # of Bytes written into serial memory at module
manufacturer
128bytes
80h
1
Total # of Bytes of SPD memory device
256bytes
08h
2
Fundamental memory type
SDRAM DDR
07h
3
# of row address on this assembly
13
0Dh
4
# of column address on this assembly
11
0Bh
5
# of module Rows on this assembly
1 Bank
01h
6
Data width of this assembly
72 bits
48h
7
.........Data width of this assembly
-
00h
8
VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9
DDR SDRAM cycle time at CAS Latency =2.5
5ns
6ns
50h
60h
10
DDR SDRAM Access time from clock at CL=2.5
±0.65ns
±0.70ns
65h
70h
11
DIMM configuration type(Non-parity, Parity, ECC)
Non-parity, ECC
02h
12
Refresh rate & type
7.8us & Self refresh
82h
13
Primary DDR SDRAM width
x4
04h
14
Error checking DDR SDRAM data width
x4
04h
15
Minimum clock delay for back-to-back random column
address
tCCD=1CLK
01h
16
DDR SDRAM device attributes : Burst lengths supported
2,4,8
0Eh
17
DDR SDRAM device attributes : # of banks on each DDR
SDRAM
4 banks
04h
18
DDR SDRAM device attributes : CAS Latency supported
2,2.5,3
0Ch
1Ch
19
DDR SDRAM device attributes : CS Latency
0CLK
01h
20
DDR SDRAM device attributes : WE Latency
1CLK
02h
21
DDR SDRAM module attributes
Registered address &
control inputs and On-card DLL
26h
22
DDR SDRAM device attributes : General
+/-0.2V voltage tolerance
00h
23
DDR SDRAM cycle time at CL =2
5.0ns
6.0ns
7.5ns
50h
60h
75h
24
DDR SDRAM Access time from clock at CL =2
±0.65ns
±0.70ns
65h
70h
25
DDR SDRAM cycle time at CL =1.5
7.5ns
-
75h
00h
26
DDR SDRAM Access time from clock at CL =1.5
±0.75ns
-
75h
00h
27
Minimum row precharge time (=tRP)
15ns
18ns
3Ch
48h
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