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參數(shù)資料
| 型號(hào)： | V826632G24S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| 中文描述： | 256 MB的200 - pin的DDR SODIMM內(nèi)存緩沖2.5伏32M的× 64 |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大?。?/td> | 213K |
| 代理商： | V826632G24S |
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6
MOSEL VITELIC
V826632G24S
V826632G24S Rev. 1.1 July 2002
29
Minimum RAS to CAS delay(=t
RCD
)
20ns
20ns
20ns
18ns
50h
50h
50h
48h
30
Minimum active to precharge time(=t
RAS
)
50ns
45ns
45ns
42ns
32h
2Dh
2Dh
2Ah
31
Module ROW density
256MB
40h
32
Command and address signal input setup time
1.1ns
0.9ns
0.9ns 0.75ns
B0h
90h
90h
75h
33
Command and address signal input hold time
1.1ns
0.9ns
0.9ns 0.75ns
B0h
90h
90h
75h
34
Data signal input setup time
0.6ns
0.5ns
0.5ns 0.45ns
60h
50h
50h
45h
35
Data signal input hold time
0.6ns
0.5ns
0.5ns 0.45ns
60h
50h
50h
45h
36-40
Superset information (may be used in future)
00h
41
SDRAM device minimum active to active/auto-refresh time
(=t
RC
)
70ns
65ns
65ns
60ns
46h
41h
41h
3Ch
42
SDRAM device minimum active to autorefresh to active/auto-refresh
time (=t
RFC
)
80ns
75ns
75ns
72ns
50h
4Bh
4Bh
48h
43
SDRAM device maximum device cycle time (=t
CK MAX
)
12ns
12ns
12ns
12ns
30h
30h
30h
30h
44
SDRAM device maximum skew between DQS and DQ signals
(=t
DQSQ
)
0.6ns
0.5ns
0.5ns
0.45ns
3Ch
32h
32h
2Dh
45
SDRAM device maximum read datahold skew factor (=t
QHS
)
1ns
0.75ns 0.75ns 0.60ns
A0h
75h
75h
60h
46-61
Superset information (may be used in future)
-
00h
62
SPD data revision code
Initial release
00h
63
Checksum for Bytes 0 ~ 62
-
E7h
22h
F2h
4Bh
64
Manufacturer JEDEC ID code
Mosel Vitelic
40h
65 -71
....... Manufacturer JEDEC ID code
00h
72
Manufacturing location
02=Taiwan 05=China 0A=S-CH
73-90
Module part number (ASCII)
V826632G24S
91
Manufacturer revison code (For PCB)
0
00
92
Manufacturer revison code (For component)
0
00
93
Manufacturing date (Week)
-
-
94
Manufacturing date (Year)
-
-
95~98 Assembly serial #
-
-
99~127 Manufacturer specific data (may be used in future)
Undefined
00h
128~25
5
Open for customer use
Undefined
00h
Byte #
Function described
Function Supported
Hex value
A1
B0
B1
C0
A1
B0
B1
C0
Serial Presence Detect Information (cont.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V826664G24S | 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V827316K04S | 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V827464K24S | 2.5 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826632K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826664G24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V826664K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
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