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參數(shù)資料
| 型號(hào)： | V826516B04S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 |
| 中文描述： | 128 MB的200 - pin的DDR SODIMM內(nèi)存2.5伏的緩沖1,600 × 64 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 285K |
| 代理商： | V826516B04S |
MOSEL VITELIC
V826516B04S
9
V826516B04S Rev. 1.3 March 2002
DDR SDRAM I
DD
SPEC TABLE
* Module I
DD
was calculated on the basis of component I
DD
and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
IDD1 : Operating current: One bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Symbol
B1(DDR266@CL=2)
B0(DDR266@CL=2.5) A1(DDR200@CL=2)
Unit
Notes
Typical
Worst
Typical
Worst
Typical
Worst
IDD0
630
690
630
690
550
590
mA
IDD1
720
810
720
810
650
730
mA
IDD2P
330
350
330
350
270
290
mA
IDD2F
430
470
430
470
370
390
mA
IDD2Q
390
410
390
410
330
350
mA
IDD3P
370
390
370
390
310
330
mA
IDD3N
450
490
450
490
370
410
mA
IDD4R
950
1070
950
1070
790
930
mA
IDD4W
990
1130
990
1130
830
990
mA
IDD5
990
1090
990
1090
910
990
mA
IDD6
Normal
16
16
16
16
16
16
16
Low power
8
8
8
8
8
8
8
Optional
IDD7A
1610
1830
1610
1830
1310
1510
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V826516G04S | 128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 |
| V826516K04S | 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826532K04S | 2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V82658B04S | 64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
| V82658J04S | 2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826516G04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 |
| V826516K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826532K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V82658B04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
| V82658J04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
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