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參數(shù)資料
| 型號： | V62C1801024LL-100B |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | Ultra Low Power 128K x 8 CMOS SRAM |
| 中文描述： | 128K的超低功耗× 8 CMOS SRAM的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 92K |
| 代理商： | V62C1801024LL-100B |
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A
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WE
CE
2
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Vcc
NC
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CE1
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I/O
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I/O
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I/O
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I/O
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GND
I/O
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I/O
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I/O
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A
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OE
1024
R
S
INPUT BUFFER
COLUMN DECODER
A
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A
12
CONTROL
CIRCUIT
7
I/O
0
WE
CE1
CE2
A
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V 62C1801024L(L)
Ultra Low Power
128K x 8 CMOS SRAM
Features
Ultra Low-power consumption
- Active: 20mA at 70ns
- Stand-by: 5
μ
A
(CMOS input/output)
1
μ
A
CMOS input/output, L version
Single +1.8V to 2.2V Power Supply
Equal access and cycle time
70/85/100/150 ns access time
Easy memory expansion with CE1, CE2
and OE inputs
1.0V data retention mode
TTL compatible, Tri-state input/output
Automatic power-down when deselected
Functional Description
The V62C1801024L is a low power CMOS Static RAM or-
ganized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW CE1, an active HIGH CE2, an
active LOW OE, and Tri-state I/O’s. This device has an a-
utomatic power-down mode feature when deselected.
Writing to the device is accomplished by taking Chip E-
nable 1 (CE1) with Write Enable (WE) LOW, and Chip Ena-
ble 2 (CE2) HIGH. Reading from the device is performed by
taking Chip Enable 1 (CE1) with Output Enable (OE)
LOW while Write Enable (WE ) and Chip Enable 2 (CE2)
is HIGH. The I/O pins are placed in a high-impedance st-
ate when the device is deselected: the outputs are disabled
during a write cycle.
The V62C1801024LL comes with a 1V data retention feature
and Lower Standby Power. The V62C1801024L is available in
a 32-pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.
32-Pin TSOP1 / STSOP
(See next page)
Logic Block Diagram
1024
X
1024
R
S
COLUMN DECODER
CONTROL
I/O8
I/O1
OE
WE
CE1
CE2
A
10
A
13
A
14
A
15
A
16
A
5
REV. 1.
1
April
2001 V62C1801024L(L)
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V62C1801024LL-100T | Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-100V | Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-150B | Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-150T | Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-150V | Ultra Low Power 128K x 8 CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V62C1801024LL-100T | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-100V | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-150B | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-150T | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:Ultra Low Power 128K x 8 CMOS SRAM |
| V62C1801024LL-150V | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:Ultra Low Power 128K x 8 CMOS SRAM |
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