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參數(shù)資料
| 型號： | V59C1512408QALF3E |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 128M X 4 DDR DRAM, BGA68 |
| 封裝： | ROHS COMPLIANT, FBGA-68 |
| 文件頁數(shù)： | 58/79頁 |
| 文件大?。?/td> | 1028K |
| 代理商： | V59C1512408QALF3E |
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61
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Overshoot and Undershoot Specification
AC Overshoot / Undershoot Specification for Address and Control Pins
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
V
Maximum overshoot area above VDD
0.80
V.ns
Maximum undershoot area below VSS
0. 80
V.ns
Parameter
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDDQ
0.23
V.ns
Maximum undershoot area below VSSQ
0. 23
V.ns
VDD
VSS
Overshoot Area
Undershoot Area
Maximum Amplitude
Time (ns)
Vo
lt
s
(
V
)
VDDQ
VSSQ
Overshoot Area
Undershoot Area
Maximum Amplitude
Time (ns)
Vo
lt
s
(
V
)
DDR2
-800
0.66
0. 66
-800
0.23
0. 23
-1066
0.5 (0.9)
0.19
1
0.5 (0.9)
1
DDR2
-1066
0.5
Note 1 The maximum requirements for peak amplitude were reduced from 0.9V to 0.5V. Register vendor datasheet will specifiy the
maximum over/undershoot induced in specific RDIMM applications. DRAM vendor datasheet will also specify the maximum oversh-
oot/undershoot that their DRAM can tolerate. This will allow the RDIMM supplier to understand whether the DRAM can tolerate the
overshoot that the register will induce in the specific RDIMM application.
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