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參數(shù)資料
| 型號(hào)： | V53C8125HT50 |
| 廠商： | MOSEL-VITELIC |
| 元件分類： | DRAM |
| 英文描述： | 128K X 8 FAST PAGE DRAM, 50 ns, PDSO28 |
| 封裝： | TSOP1-28 |
| 文件頁數(shù)： | 14/17頁 |
| 文件大?。?/td> | 1527K |
| 代理商： | V53C8125HT50 |
6
V53C8125H Rev. 1.7 August 1998
MOSEL VITELIC
V53C8125H
29
tWP
Write Pulse Width
55567
ns
30
tWCR
Write Command Hold Time
from RAS
26
28
30
35
40
ns
31
tRWL
Write Command to RAS
Lead Time
10
11
12
13
14
ns
32
tDS
Data in Setup Time
00000
ns
14
33
tDH
Data in Hold Time
55567
ns
14
34
tWOH
Write to OE Hold Time
55678
ns
14
35
tOED
OE to Data Delay Time
55678
ns
14
36
tRWC
Read-Modify-Write Cycle Time
100
105
110
115
130
ns
37
tRRW
Read-Modify-Write Cycle
RAS Pulse Width
65
70
75
80
87
ns
38
tCWD
CAS to WE Delay
26
28
30
32
34
ns
12
39
tRWD
RAS to WE Delay in Read-
Modify-Write Cycle
50
54
58
62
68
ns
12
40
tCRW
CAS Pulse Width (RMW)
44
46
48
50
52
ns
41
tAWD
Col. Address to WE Delay
32
35
38
41
42
ns
12
42
tPC
Fast Page Mode Read
or Write Cycle Time
19
21
23
25
28
ns
43
tCP
CAS Precharge Time
44567
ns
44
tCAR
Column Address to RAS
Setup Time
16
18
20
22
24
ns
45
tCAP
Access Time from Column
Precharge
19
21
23
25
27
ns
7
46
tDHR
Data in Hold Time Referenced
to RAS
26
28
30
35
40
ns
47
tCSR
CAS Setup Time CAS- before-
RAS Refresh
10
ns
48
tRPC
RAS to CAS Precharge Time
00000
ns
49
tCHR
CAS Hold Time CAS-before-
RAS Refresh
7
8
10
12
ns
50
tPCM
Fast Page Mode Read-Modify-
Write Cycle Time
56
58
60
65
70
ns
51
tT
Transition Time (Rise and Fall)
3
50
3
50
3
50
3
50
3
50
ns
15
52
tREF
Refresh Interval (512 Cycles)
88888
ms
17
#
Symbol
Parameter
30
35
40
45
50
Unit Notes
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
AC Characteristics (Contd)
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