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參數(shù)資料
| 型號： | UTCBT169 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | UTCBT169 |
UTC BT169
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
DESCRIPTION
The UTC BT169 is glass passivated, sensitive gate
thyristors in a plastic envelope, intended for use in
general purpose switching and phase control
applications. These devices are intended to be
interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
TO-92
1
1:CATHODE 2:GATE 3:ANODE
QUICK REFERENCE DATA
PARAMETER
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
MAX(B)
200
0.5
0.8
8
MAX(D)
400
0.5
0.8
8
MAX(E)
500
0.5
0.8
8
MAX(G)
600
0.5
0.8
8
UNIT
V
A
A
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages :
SYMBOL
V
DRM
,V
RRM
CONDITIONS
MIN
MAX
B:200
D:400
E:500
G:600
0.5
UNIT
V
Average on-state current
I
T(AV)
Half sine wave;
Tlead<=83
°
C
All conduction angles
t=10ms
t=8.3ms
half sine wave;
Tj=25
°
C prior to surge
t=10ms
I
TM
=2A;I
G
=10mA;
dI
G
/dt=100mA/
μ
s
A
RMS on-state current
Non-repetitive peak on-state current
I
T(RMS)
I
TSM
0.8
8
9
A
A
I
2
t for fusing
Repetitive rate of rise of on-state current
after triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
I
2
t
0.32
50
A
2
S
A/
μ
s
DI
T
/dt
I
GM
V
GM
V
RGM
1
5
5
A
V
V
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|---|---|
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