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參數(shù)資料
| 型號： | UTC2N2955 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SILICON PNP TRANSISTOR |
| 中文描述： | 硅PNP晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | UTC2N2955 |
UTC 2N2955
SILICON PNP TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R205-004,A
SILICON PNP TRANSISTORS
The UTC 2N2955 is a silicon PNP transistor in TO-3
metal case. It is intended for power switching circuits,
series and shunt regulators, output stages and high fidelity
amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETERS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current(1)
Base Current
Base Peak Current(1)
Total Dissipation at Ta=25
°
C
Storage Temperature
Max. Operating Junction Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
Collector-Emitter Sustaining Voltage V
CER
(sus)
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
CEX
SYMBOL
V
CBO
V
CEO
V
EBO
V
CEV
Ic
I
CM
I
B
I
BM
P
tot
T
STG
Tj
VALUE
100
60
7
70
15
15
7
15
115
-65 to 200
200
UNITS
V
V
V
V
A
A
A
A
W
°
C
°
C
TEST CONDITIONS
Ic=200mA, I
B
=0V
MIN
60
TYP
MAX
UNIT
V
V
CEO
(sus)
Ic=0.2 A, R
BE
=100 Ohms
V
CE
=30V,IB=0
V
CE
=100V,V
BE
(off)=1.5V.
V
CE
=100V,V
BE
(off)=1.5V,
Ta=150
°
C
V
BE
=7V,I
C
=0
Ic=4A,V
CE
=4V,
Ic=10A,V
CE
=4V
Ic=4A,I
B
=400mA
Ic=10A,I
B
=3.3A
70
V
mA
mA
0.7
1.0
5.0
Emitter Cut-off Current
ON CHARACTERISTICS
DC Current Gain(note)
I
EBO
h
FE
V
CE
(sat)
5.0
70
mA
20
5
Collector-Emitter Saturation Voltage
1.1
3.0
V
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