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參數(shù)資料
| 型號： | UT7C138C55GCC |
| 英文描述： | SRAM|4KX8|CMOS| RAD HARD|PGA|68PIN|CERAMIC |
| 中文描述： | 靜態(tài)存儲器| 4KX8 |的CMOS | RAD數(shù)據(jù)通信硬|美巡賽| 68PIN |陶瓷 |
| 文件頁數(shù)： | 5/21頁 |
| 文件大小： | 272K |
| 代理商： | UT7C138C55GCC |
5
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2. Maximum junction temperature may be increased to +175
°
C during burn-in and steady-static life.
3. Test per MIL-STD-883, Method 1012, infinite heat sink.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
V
DD
DC supply voltage
-0.5 to 7.0V
V
I/O
Voltage on any pin
-0.5 to (V
DD
+ 0.3)V
T
STG
Storage temperature
-65 to +150
°
C
P
D
Maximum power dissipation
2.0W
T
J
Maximum junction temperature
2
+150
°
C
Θ
JC
Thermal resistance, junction-to-case
3
3.3
°
C/W
I
I
DC input current
±
10 mA
SYMBOL
PARAMETER
LIMITS
V
DD
Positive supply voltage
4.5 to 5.5V
T
C
Case temperature range
-55 to +125
°
C
V
IN
DC input voltage
0V to V
DD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UT7C138C55GCX | SRAM|4KX8|CMOS| RAD HARD|PGA|68PIN|CERAMIC |
| UT7C138C55GPA | x8 Dual-Port SRAM |
| UT7C139C55GPA | x9 Dual-Port SRAM |
| UT7C139C55GPC | x9 Dual-Port SRAM |
| UT7C139C55GPX | x9 Dual-Port SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UT7C138C55GCX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|4KX8|CMOS| RAD HARD|PGA|68PIN|CERAMIC |
| UT7C138C55GPA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM |
| UT7C138C55GPC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM |
| UT7C138C55GPX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM |
| UT7C138C55WCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|4KX8|CMOS| RAD HARD|QFL|68PIN|CERAMIC |
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