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參數(shù)資料
| 型號： | UT7401G-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 245K |
| 代理商： | UT7401G-AE3-R |
UT7401
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-122.C
ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
TA=25°C
-1.2
A
Continuous Drain Current (Note 1)
TA=70°C
ID
-1.0
A
Pulsed Drain Current (Note 2)
IDM
-10
A
TA=25°C
350
mW
Power Dissipation (Note 1)
TA=70°C
PD
220
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 1)
θJA
350
425
°С/W
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VDS=-24V, VGS=±12V
±10
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.6
-1
-1.4
V
VGS=-10V, ID=-1.2A
122
150
m
VGS=-4.5V, ID=-1.0A
147
200
m
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-2.5V, ID=-1.2A
207
280
m
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
409
pF
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-15V, f=1MHz
42
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
6.2
ns
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF)
41.2
ns
Turn-OFF Fall Time
tF
VDS=-15V, VGS=-10V,
RG=3, RL=15
14.5
ns
Total Gate Charge (Note 2)
QG
5.06
nC
Gate-Source Charge
QGS
0.72
nC
Gate-Drain Charge
QGD
VDS=-15V, VGS=-4.5V, ID=-1A
1.58
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1A
-0.85
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-0.5
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board
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