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參數(shù)資料
| 型號(hào)： | UT54ACTS132-PCX |
| 元件分類： | 門電路 |
| 英文描述： | ACT SERIES, QUAD 2-INPUT NAND GATE, CDIP14 |
| 封裝： | DIP-14 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | UT54ACTS132-PCX |
RadHard MSI Logic
68
UT54ACS132/UT54ACTS132
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold 2
80
MeV-cm2/mg
SEL Threshold
120
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-.3 to VDD +.3
V
TSTG
Storage Temperature range
-65 to +150
C
TJ
Maximum junction temperature
+175
C
TLS
Lead temperature (soldering 5 seconds)
+300
C
JC
Thermal resistance junction to case
20
C/W
II
DC input current
10
mA
PD
Maximum power dissipation
1
W
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
4.5 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to + 125
C
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