參數(shù)資料
型號(hào): UT54ACS273-PCX
元件分類(lèi): 鎖存器
英文描述: AC SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, CDIP20
封裝: SIDE-BRAZED, CERAMIC, DIP-20
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 48K
代理商: UT54ACS273-PCX
RadHard MSI Logic
190
UT54ACS273/UT54ACTS273
LOGIC DIAGRAM
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold
2
80
MeV-cm
2
/mg
SEL Threshold
120
MeV-cm
2
/mg
Neutron Fluence
1.0E14
n/cm
2
1D
(3)
1Q
(2)
2D
(4)
2Q
(5)
3D
(7)
3Q
(6)
4D
(8)
4Q
(9)
5D
(13)
5Q
(12)
6D
(14)
6Q
(15)
7D
(17)
7Q
(16)
8D
(18)
8Q
(19)
C
(11)
(1)
CLR
CLK
D
R
C
D
R
C
D
R
C
D
R
C
D
R
C
D
R
C
D
R
C
D
R
SYMBOL
PARAMETER
LIMIT
UNITS
V
DD
Supply voltage
-0.3 to 7.0
V
V
I/O
Voltage any pin
-.3 to V
DD
+.3
V
T
STG
Storage Temperature range
-65 to +150
C
T
J
Maximum junction temperature
+175
C
T
LS
Lead temperature (soldering 5 seconds)
+300
C
JC
Thermal resistance junction to case
20
C/W
I
I
DC input current
10
mA
P
D
Maximum power dissipation
1
W
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