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| 型號(hào)： | UT5003G-S08-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.0275 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 294K |
| 代理商： | UT5003G-S08-R |
UT5003
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
7 of 8
www.unisonic.com.tw
QW-R502-167.B
TYPICAL CHARACTERISTICS(Cont.)
ID=-5A
VGS=-10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
Junction TemperaturemTJ (℃)
On-Resistance Variation with
Temperature
No
rm
ali
ze
dDr
a
in-
S
ou
rc
eO
n-
Res
istan
ce,R
DS
(ON
)
ID=-5A
TA=125℃
25℃
0.2
0.15
0.1
0.05
0
2
46
8
10
Gate-to-Source Voltage,-VGS (V)
On-R
esi
stanc
e,R
DS(
O
N)
(
Ω
)
On-Resistance Variation with Gate-
to-Source Voltage
VDS=-10V
TA=-55℃
125℃
25℃
30
25
20
15
10
5
0
1.5
3.5
2.5
4.5
5.5
Gate-to-Source Voltage,-VGS (V)
D
rain
Cu
rr
en
t,-I
D
(A)
Transfer Characteristics
Body Diode Forward Voltage Variation with
Source Current and Temperature
100
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Body Diode Forward Voltage,-VSD (V)
Reverse
Drain
Current,
-I
S
(A)
VGS=0V
TA=125℃
25℃
-55℃
-10V
-15V
VDS=-5V
ID=-5A
10
8
6
4
2
0
05
10
15
20
Gate Charge Characteristics
Ga
te
Source
Vo
ltag
e,-V
GS
(V)
Gate Charge,QG (nC)
Ca
pa
citance
,C
(p
F)
Capacitance Characteristics
Drain-to-Source Voltage,-VDS (V)
COSS
CRSS
CISS
0
200
400
600
800
1000
1200
05
10
15
20
f=1MHZ
VGS=V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UT5003L-S08-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL) |
| UT5003Z | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) |
| UT5003ZG-S08-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) |
| UT5003ZL-S08-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) |
| UT50ER | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC |
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