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| 型號： | UT2309L-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 3.7 A, 30 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 218K |
| 代理商： | UT2309L-AE3-R |
UT2309
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-148.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
-3.7
A
Pulsed Drain Current (Note 1, 2)
IDM
-12
A
Total Power Dissipation
PD
1.38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
90
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 A
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-0.5
uA
Gate-Source Leakage Current
IGSS
VGS= ±20V, VDS=0V
5
nA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ Reference to 25°C, ID=-1mA
-0.02
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1
-3
V
VGS=-10V, ID=-5A
65
m
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS=-4.5V, ID=-5A
85
m
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
412
660
pF
Output Capacitance
COSS
91
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=-25V,f=1.0MHz
62
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
8
ns
Turn-ON Rise Time
tR
5
ns
Turn-OFF Delay Time
tD(OFF)
20
ns
Turn-OFF Fall Time
tF
VDS=-15V,ID=-1A,RG=3.3,
VGS=-10V,RD=15
7
ns
Total Gate Charge (Note 2)
QG
5
8
nC
Gate-Source Charge
QGS
1
nC
Gate-Drain Charge
QGD
VDS=-24V, VGS=-4.5V,
ID=-3A
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage
VSD
IS=-1A, VGS=0V
-0.76 -1.2
V
Reverse Recovery Time
tRR
20
ns
Reverse Recovery Charge
QRR
IS=-3A, VGS=0V,
dI/dt=-100A/μs
15
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us , duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.
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