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參數(shù)資料
| 型號(hào)： | UPD4564841 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 64M-bit Synchronous DRAM 4-bank, LVTTL |
| 中文描述： | 6400位同步DRAM 4銀行，LVTTL |
| 文件頁數(shù)： | 17/85頁 |
| 文件大小： | 919K |
| 代理商： | UPD4564841 |
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Data Sheet E0149N10
17
μ
PD4564441, 4564841, 4564163
(2/3)
Notes
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Read with auto
H
×
×
×
×
DESL
Continue burst to end
→
Precharging
precharge
L
H
H
H
×
NOP
Continue burst to end
→
Precharging
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write with auto
precharge
H
×
×
×
×
DESL
Continue burst to end
→
Write
recovering with auto precharge
L
H
H
H
×
NOP
Continue burst to end
→
Write
recovering with auto precharge
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Precharging
H
×
×
×
×
DESL
Nop
→
Enter idle after t
RP
L
H
H
H
×
NOP
Nop
→
Enter idle after t
RP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Nop
→
Enter idle after t
RP
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Row activating
H
×
×
×
×
DESL
Nop
→
Enter bank active after t
RCD
L
H
H
H
×
NOP
Nop
→
Enter bank active after t
RCD
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3, 10
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
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