參數(shù)資料
型號： UPD442002F9-BB70X-BC2-A
廠商： NEC Corp.
英文描述： 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述： 200萬位CMOS靜態(tài)RAM 128K的字由16位溫度范圍
文件頁數(shù)： 7/24頁
文件大?。?/td> 281K
代理商： UPD442002F9-BB70X-BC2-A
Data Sheet M14670EJ7V
1
DS
7
μ
PD442002-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (1/2)
Parameter
Symbol
Test condition
-BB70X
Unit
MIN.
TYP.
MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
, /CS = V
IH
or
–1.0
+1.0
μ
A
/WE = V
IL
or /OE = V
IH
Operating supply current
I
CCA1
/CS = V
IL
, I
I/O
= 0 mA, Minimum cycle time
–
30
mA
I
CCA2
/CS = V
IL
, I
I/O
= 0 mA, Cycle time =
∞
–
4
I
CCA3
/CS
≤
0.2 V, Cycle time = 1
μ
s, I
I/O
= 0 mA,
–
4
V
IL
≤
0.2 V, V
IH
≥
V
CC
– 0.2 V
Standby supply current
I
SB
/CS = V
IH
or /LB = /UB = V
IH
–
0.6
mA
I
SB1
/CS
≥
V
CC
– 0.2 V
0.3
4
μ
A
I
SB2
/LB = /UB
≥
V
CC
– 0.2 V, /CS
≤
0.2 V
0.3
4
High level output voltage
V
OH
I
OH
= –0.5 mA
2.4
V
Low level output voltage
V
OL
I
OL
= 1.0 mA
0.4
V
Remark
V
IN
: Input voltage
V
I/O
: Input / Output voltage
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UPD442002F9-BC70X-BC2-A 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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