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參數(shù)資料
| 型號： | UPD441000LGU-C12X-9JH |
| 廠商： | NEC Corp. |
| 英文描述： | 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 100萬位CMOS靜態(tài)RAM 128K的字8位擴(kuò)展工作溫度 |
| 文件頁數(shù)： | 12/28頁 |
| 文件大小： | 166K |
| 代理商： | UPD441000LGU-C12X-9JH |
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Data Sheet M13714EJ5V0DS
12
μ
PD441000L-X
Write Cycle (1/3) (B version)
Parameter
Symbol
μ
PD441000L-B70X
μ
PD441000L-B85X
μ
PD441000L-B10X
Unit
Condition
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Write cycle time
t
WC
70
85
100
ns
/CE1 to end of write
t
CW1
55
70
80
ns
CE2 to end of write
t
CW2
55
70
80
ns
Address valid to end of write
t
AW
55
70
80
ns
Address setup time
t
AS
0
0
0
ns
Write pulse width
t
WP
50
60
60
ns
Write recovery time
t
WR
0
0
0
ns
Data valid to end of write
t
DW
35
35
40
ns
Data hold time
t
DH
0
0
0
ns
/WE to output in high impedance
t
WHZ
25
30
35
ns
Note
Output active from end of write
t
OW
5
5
5
ns
Note
The output load is 1TTL + 5 pF.
Remark
These AC characteristics are in common regardless of package types.
Write Cycle (2/3) (C version)
Parameter
Symbol
μ
PD441000L-C10X
μ
PD441000L-C12X
Unit
Condition
MIN.
MAX.
MIN.
MAX.
Write cycle time
t
WC
100
120
ns
/CE1 to end of write
t
CW1
80
100
ns
CE2 to end of write
t
CW2
80
100
ns
Address valid to end of write
t
AW
80
100
ns
Address setup time
t
AS
0
0
ns
Write pulse width
t
WP
60
85
ns
Write recovery time
t
WR
0
0
ns
Data valid to end of write
t
DW
45
60
ns
Data hold time
t
DH
0
0
ns
/WE to output in high impedance
t
WHZ
35
40
ns
Note
Output active from end of write
t
OW
5
5
ns
Note
The output load is 1TTL + 5 pF.
Remark
These AC characteristics are in common regardless of package types.
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