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參數(shù)資料
| 型號： | UPA880TS |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) |
| 中文描述： | npn型硅鍺射頻晶體管（2不同的元素）在6針超鉛無MINIMOLD（1007包） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | UPA880TS |
Preliminary Data Sheet PU10462EJ01V0DS
3
μ
PA880TS
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 0.5 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 2 mA
140
180
220
Gain Bandwidth Product
f
T
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
15
18
GHz
Insertion Power Gain
S
21e
2
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
11
13
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
0.8
1.5
dB
Associated Gain
G
a
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
9.5
11.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
0.2
0.4
pF
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 0.5 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 5 mA
140
180
220
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
7
10
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
17
GHz
Insertion Power Gain (1)
S
21e
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
7.5
9
dB
Insertion Power Gain (2)
S
21e
2
V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
10
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
0.9
1.5
dB
Associated Gain
G
a
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
7
10
dB
Reverse Transfer Capacitance
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
C
re
Note 2
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
0.5
0.7
pF
Rank
FB
Marking
xK
h
FE
Value of Q1
140 to 220
h
FE
Value of Q2
140 to 220
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