參數(shù)資料
型號(hào)： UPA858TD
英文描述： TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR
中文描述： 晶體管|晶體管|一對(duì)|叩| 3V的五（巴西）總裁| 30mA的一（c）|的SOT - 363VAR
文件頁(yè)數(shù)： 1/35頁(yè)
文件大?。?/td> 172K
代理商： UPA858TD
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TWIN TRANSISTOR
μ
PA850TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
Document No. PU10096EJ01V0DS (1st edition)
Date Published February 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
FEATURES
Low voltage operation
2 different built-in transistors (2SC5435, 2SC5736)
Q1: High gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
Q2: Low phase distortion transistor suited for OSC applications
f
T
= 5.0 GHz TYP.,
S
21e
6-pin lead-less minimold package
2
= 8.5 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
2
= 4.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
Q2
3-pin thin-type ultra super minimold part No.
2SC5435
2SC5736
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA850TD
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA850TD-T3
10 kpcs/reel
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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