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參數(shù)資料
| 型號(hào)： | UPA843TC-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| 中文描述： | NPN硅射頻晶體管2不同元素在一個(gè)平面，鉛6引腳薄型超超級(jí)MINIMOLD |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 76K |
| 代理商： | UPA843TC-T1 |
Preliminary Data Sheet P14679EJ2V0DS00
5
μ
PA843TC
DC Characteristics
Q1
Q2
1 000
100
10
1
0.1
1
10
100
D
F
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10
1
0.1
1
10
100
D
F
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
f
T
Characteristics
Q1
Q2
20
18
14
12
16
8
6
10
2
0
4
1
10
100
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
V
CE
= 1 V
12
8
10
6
2
4
0
1
10
100
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
V
CE
= 1 V
Gain Characteristics
Q1
Q2
12
10
8
6
4
2
0
1
10
100
M
M
I
2
|
2
Collector Current I
C
(mA)
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
f = 2 GHz
V
CE
= 1 V
MSG.
|S
21e
|
2
MAG.
20
18
16
14
12
8
6
10
4
1
10
100
M
M
I
2
|
2
Collector Current I
C
(mA)
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
f = 2 GHz
V
CE
= 1 V
MSG.
|S
21e
|
2
MAG.
相關(guān)PDF資料 |
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| UPA880TS-T3 | NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA843TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 210MA I(C) | TSOP |
| UPA843TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 210MA I(C) | TSOP |
| UPA844TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA844TC-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 3.3V V(BR)CEO | 35MA I(C) | TSOP |
| UPA846TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | TSOP |
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