參數(shù)資料
型號: UPA2730TP
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOSFET
中文描述: 開關(guān)的P -溝道功率MOSFET
文件頁數(shù): 3/8頁
文件大?。?/td> 80K
代理商: UPA2730TP
Data Sheet G15983EJ1V0DS
3
μ
PA2730TP
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.5
1
1.5
2
2.5
3
3.5
4
0
25
50
75
100
125
150
175
Mounted on a glass epoxy board
(1 inch × 1 inch × 0.8 mm)
T
A
= 25
°
C , PW = 10 s , Single pulse
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- 0.01
- 0.1
- 1
- 10
- 100
- 1000
- 0.1
- 1
- 10
- 100
I
D(pulse)
10 ms
Power Dissipation
Limited
I
D(DC)
PW =
100
μ
s
1 ms
10 s
R
DS(on)
Limited
(at V
GS
=
10 V)
100 ms
Mounted on a glass epoxy board
(1 inch ×1 inch × 0.8 mm)
T
A
= 25
°
C , Single pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.01
0.1
1
10
100
1000
R
th(ch-C)
= 3.13
°
C/W
R
th(ch-A)
= 89.3
°
C/W
Remark r
th(ch-A)
: Mounted on a glass epoxy board
(1 inch × 1 inch × 0.8 mm) , T
A
= 25
°
C
r
th(ch-C)
: T
C
= 25
°
C
Single pulse
PW - Pulse Width - s
100
μ
1 m
10 m
100 m
1
10
100
1000
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