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參數(shù)資料
| 型號(hào)： | UPA2719GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)的P -溝道功率MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 140K |
| 代理商： | UPA2719GR |
Data Sheet G16953EJ1V0DS
2
μ
PA2719GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
–
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1 mA
m
10
–
2.5
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
V
GS(off)
–
1.0
V
| y
fs
|
V
DS
=
10 V, I
D
=
5.0 A
8
S
R
DS(on)1
V
GS
=
10 V, I
D
=
5.0 A
10.6
13
m
R
DS(on)2
V
GS
=
4.5 V, I
D
=
5.0 A
14.2
20.9
m
R
DS(on)3
V
GS
=
4.0 V, I
D
=
5.0 A
16.6
25.5
m
Input Capacitance
C
iss
V
DS
=
10 V
2010
pF
Output Capacitance
C
oss
V
GS
= 0 V
460
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
350
pF
Turn-on Delay Time
t
d(on)
V
DD
=
15 V, I
D
=
5.0 A
12
ns
Rise Time
t
r
V
GS
=
10 V
15
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
290
ns
Fall Time
t
f
180
ns
Total Gate Charge
Q
G
V
DD
=
24 V
43
nC
Gate to Source Charge
Q
GS
V
GS
=
10 V
5.5
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
=
10 A
12
nC
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
105
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
6.7
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
L
V
DD
V
GS
=
20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
)
10%
90%
V
GS
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
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