參數(shù)資料
型號(hào): UPA2460T1Q-E1-A
元件分類: 小信號(hào)晶體管
英文描述: 6500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, HUSON-8
文件頁數(shù): 7/9頁
文件大小: 228K
代理商: UPA2460T1Q-E1-A
μ PA2460T1Q
Chapter Title
R07DS0185EJ0100 Rev.1.00
Page 7 of 7
Dec 06, 2010
<Notes for using this device safely>
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following
contents. If used exceeding recommended conditions, there is a possibility of causing failure of the device and
characteristic degradation.
1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared reflow.
If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
4. Please refer to Figure 1 as an example of the land pattern. Optimize the land pattern in consideration of density,
appearance of solder fillets, common difference, etc in an actual design.
Figure 1. Example of the land pattern
a
ti
on.
Al
l
ri
e
rve
d.
0.3
0.45
0.5
1.6
0.25
0.45
0.25
0.3
1.8
3.0
1.6
Unit: mm
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