參數(shù)資料
型號(hào): UPA2450C
廠(chǎng)商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 166K
代理商: UPA2450C
Data Sheet G18792EJ1V0DS
6
μ
PA2450C
<Notes for using this device safely>
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding
the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of
the device and characteristic degradation.
1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result in
failure.
2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
4. Please refer to
Figure 1
as an example of the land pattern. Optimize the land pattern in consideration of density,
appearance of solder fillets, common difference, etc in an actual design.
Figure 1. Example of the land pattern
3.86
2.04
0.83
0.30
Unit: mm
0.50
1
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