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參數(shù)資料
| 型號： | UPA2350BT1P-E4-A |
| 元件分類： | JFETs |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, LGA, EFLIP-4 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 367K |
| 代理商： | UPA2350BT1P-E4-A |
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MOS FIELD EFFECT TRANSISTOR
μPA2350BT1P
DUAL N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. G20065EJ1V0DS00 (1st edition)
Date Published November 2009 NS
Printed in Japan
2009
DESCRIPTION
The
μ PA2350BT1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
FEATURES
Monolithic Dual MOSFET
Connecting the Drains on the circuit board is not required
because the Drains of the FET1 and the FET2 are internally
connected.
2.5 V drive available and low on-state resistance
RSS(on)1 = 35 m
Ω MAX. (VGS = 4.5 V, IS = 3.0 A)
RSS(on)2 = 37 m
Ω MAX. (VGS = 4.0 V, IS = 3.0 A)
RSS(on)3 = 44 m
Ω MAX. (VGS = 3.1 V, IS = 3.0 A)
RSS(on)4 = 55 m
Ω MAX. (VGS = 2.5 V, IS = 3.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ PA2350BT1P-E4-A
Note
4-pin EFLIP-LGA
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Remark "-E4" indicates the unit orientation (E4 only).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Source to Source Voltage (VGS = 0 V)
VSSS
20
V
Gate to Source Voltage (VSS = 0 V)
VGSS
±12
V
Source Current (DC)
Note1
IS(DC)
6.0
A
Source Current (pulse)
Note2
IS(pulse)
±50
A
Total Power Dissipation
Note1
PT
1.3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. Mounted on ceramic board of 50 cm2 x 1.0 mmt
2. PW
≤ 100
μs, Single Pulse
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
OUTLINE DRAWING (Unit: mm)
G1
S2
G2
S1
1.47
± 0.05
0.2
± 0.05
1.47
±
0.05
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
0.65
4 -
0.3
Dot area (For in-house)
1-pin index mark S1
TOP VIEW
BOTTOM VIEW
φ
EQUIVALENT CIRCUIT
FET1
FET2
Gate 2
Gate 1
Body Diode
Protection
Diode
Source 2
Source 1
Gate
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2350T1G-E4 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2350T1P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2353 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2353T1G-E4-A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2354 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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