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參數(shù)資料
| 型號(hào)： | UPA1970 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1970 |
2001
MOS FIELD EFFECT TRANSISTOR
μ
PA1970
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G15934EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
μ
PA1970 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 69 m
MAX. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)2
= 72 m
MAX. (V
GS
= 4.0 V, I
D
= 1.0 A)
R
DS(on)3
= 107 m
MAX. (V
GS
= 2.5 V, I
D
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1970TE
Note
SC-95 (Mini Mold Thin Type)
Note
Marking: TT
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (2 units)
(T
A
= 25°C)
Note2
Total Power Dissipation (1 unit) (T
A
= 25°C)
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
V
V
A
A
W
W
°C
°C
±
12
±
2.2
±
8.8
1.15
0.57
150
Channel Temperature
Storage Temperature
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 5000 mm
2
x 1.1 mm, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
6
5
4
1.9
2.9 ±0.2
0.32
+0.1
0.95
0
+
–
4
: Drain 2
3: Gate 2
2: Source 2
6: Drain 1
1: Gate 1
5: Source 1
EQUIVALENT CIRCUITS
Source 1
Body
Diode
Gate
Protection
Diode
Gate 1
Drain 1
Source 2
Body
Diode
Gate
Protection
Diode
Gate 2
Drain 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1970TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2756GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2780GR | SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| UPA607 | P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
| UPA607T | P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1970TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1980 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1980TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1980TET1JM | 制造商:NEC 功能描述:New |
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