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參數(shù)資料
| 型號(hào)： | UPA1913TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | UPA1913TE |
Data Sheet D13807EJ2V0DS00
4
μ
PA1913
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
40
T
A
= 125
C
75
C
25
C
25
C
60
80
100
V
GS
=
2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
40
T
A
= 125
C
75
C
25
C
25
C
60
80
100
V
GS
=
2.7 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
30
T
A
= 125
C
75
C
25
C
25
C
40
60
50
70
V
GS
=
4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
30
T
A
= 125
C
75
C
25
C
25
C
40
60
50
70
V
GS
=
4.5 V
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
2.5 A
50
0
50
100
150
20
60
40
100
80
R
D
-
V
GS
=
2.5 V
2.7 V
4.0 V
4.5 V
0
20
60
40
80
100
120
2
V
GS
- Gate to Source Voltage - V
4
6
8
10
12
R
D
-
I
D
=
2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1914 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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| UPA1915 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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