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參數(shù)資料
| 型號： | UPA1911TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應晶體管開關 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | UPA1911TE |
Data Sheet D13455EJ1V0DS00
2
μ
PA1911
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –20
V, V
GS
= 0
V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±12
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10
V, I
D
= –1
mA
–0.5
–0.92
–1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –1.5
A
1
4.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –4.5
V, I
D
= –1.5
A
80
115
m
R
DS(on)2
V
GS
= –4.0
V, I
D
= –1.5
A
86
120
m
R
DS(on)3
V
GS
= –2.5
V, I
D
= –1.0
A
130
190
m
Input Capacitance
C
iss
V
DS
= –10
V
540
pF
Output Capacitance
C
oss
V
GS
= 0
V
190
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
90
pF
Turn-on Delay Time
t
d(on)
V
DD
= –10
V
140
ns
Rise Time
t
r
I
D
= –1.5
A
500
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= –4.0
V
420
ns
Fall Time
t
f
R
G
= 10
850
ns
Total Gate Charge
Q
G
V
DD
= –10
V
5.0
nC
Gate to Source Charge
Q
GS
I
D
= –2.5
A
1.5
nC
Gate to Drain Charge
Q
GD
V
GS
= –4.0
V
2.0
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 2.5
A, V
GS
= 0
V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 2.5
A, V
GS
= 0
V
30
ns
Reverse Recovery Charge
Q
rr
di/dt = 10
A
/
μ
s
2.0
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
V
GS
Wave Form
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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相關代理商/技術參數(shù) |
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| UPA1913TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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