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參數(shù)資料
| 型號： | UPA1911 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 65K |
| 代理商： | UPA1911 |
Data Sheet D13455EJ1V0DS00
4
μ
PA1911
1
10
0.1
I
D
- Drain Current - A
V
GS
=
2.5 V
25
C
25
C
R
D
150
200
250
300
100
50
0
0.01
350
75
C
T
A
= 125
C
DRAIN TO SOURCE ON-STATE RESISTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
0
50
200
250
100
150
V
GS
=
4.0 V
25
C
25
C
75
C
T
A
= 125
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
0
50
100
200
150
V
GS
=
4
.5 V
25
C
25
C
75
C
T
A
= 125
C
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
1.5 A
50
0
50
100
150
0
100
50
200
150
R
D
-
V
GS
=
2.5 V
4.0 V
4.5 V
0
0
100
50
150
200
2
V
GS
- Gate to Source Voltage - V
4
6
8
10
R
D
-
I
D
=
1.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
10
100
1000
1
10
100
f = 1
MHz
V
GS
= 0 V
C
iss
C
oss
C
rss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1911TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1951 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1951TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1911A | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911ATE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911ATE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1911TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1912 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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