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參數(shù)資料
| 型號： | UPA1901TE |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1901TE |
Data Sheet G15804EJ1V0DS
5
μ
PA1901
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
20
40
60
80
100
0.01
0.1
1
10
100
V
GS
= 2.5 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
20
40
60
80
100
0
5
10
15
Pulsed
I
D
= 3.5 A
R
D
I
D
- Drain Current - A
R
D
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
R
D
0
20
40
60
80
-50
0
50
100
150
Pulsed
I
D
= 3.5 A
V
GS
= 2.5 V
4.0 V
4.5 V
C
i
,
o
,
r
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
T
ch
- Channel Temperature -
°
C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
10
100
1000
0.1
1
10
V
DD
= 10 V
V
GS
= 4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
V
G
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
I
D
= 6.5 A
V
DD
= 24 V
6 V
15 V
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1902 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1902TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1910 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1910TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911A | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1901TE-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1901TE-T1-AT | 制造商:Renesas Electronics 功能描述:Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 6.5A 6-Pin Thin-Type Mini-Mold T/R |
| UPA1901TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1902 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1902TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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