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參數(shù)資料
| 型號(hào)： | UPA1900TE |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 61K |
| 代理商： | UPA1900TE |
Data Sheet D13809EJ1V0DS00
4
μ
PA1900
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
60
50
40
30
20
V
GS
= 2.5 V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
50
40
30
20
V
GS
= 4.0
V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0.01
0.1
1
10
100
50
40
30
20
V
GS
= 4.5
V
T
A
=125
°
C
75
°
C
25
°
C
25
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
T
ch
- Channel Temperature -
°
C
R
D
I
D
= 3.0
A
50
0
50
100
150
50
40
30
20
V
GS
= 2.5
V
4.0
V
4.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
V
GS
- Gate to Source Voltage - V
R
D
2
4
6
8
10
80
60
40
20
0
I
D
= 3.0 A
0.1
1
10000
1000
100
10
10
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain Source Voltage - V
C
oss
C
rss
C
iss
f = 1
MHz
V
GS
= 0 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1901 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1901TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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