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參數(shù)資料
| 型號(hào)： | UPA1874BGR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 145K |
| 代理商： | UPA1874BGR-9JG |
Data Sheet G16743EJ1V0DS
4
μ
PA1874B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
10
20
30
40
0
0.1
0.2
0.3
0.4
0.5
Pulsed
2.5 V
V
GS
= 4.5 V
4.0 V
3.1 V
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
I
D
0.001
0.01
0.1
1
10
100
0.5
1
1.5
2
2.5
V
DS
=10.0 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.5
1
1.5
-50
0
50
100
150
V
DS
= 10.0 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
|
f
0.1
1
10
100
0.01
0.1
1
10
V
DS
= 10.0 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0
10
20
30
40
0.1
1
10
100
V
GS
= 4.5 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
I
D
- Drain Current - A
R
D
0
10
20
30
40
0.1
1
10
100
T
A
= 125°C
75°C
25°C
25°C
V
GS
= 4.0 V
Pulsed
I
D
- Drain Current - A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1874BGR-9JG-E1-A | 制造商:Renesas Electronics Corporation 功能描述:RENUPA1874BGR-9JG-E1-A MOS FIELD EFFECT 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 8A 8-PIN POWER TSSOP T/R - Tape and Reel |
| UPA1874GR-9JG | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | TSSOP |
| UPA1890 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1890GR-9JG | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1890GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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