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參數(shù)資料
| 型號(hào)： | UPA1809 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | UPA1809 |
Data Sheet G16273EJ1V0DS
4
μ
PA1809
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
8
16
24
32
0
0.5
1.0
1.5
2.0
Pulsed
4.0 V
V
GS
= 10 V
4.5 V
I
D
0.0001
0.001
0.01
0.1
1
10
100
1.0
1.5
V
GS
- Gate to Source Voltage - V
2.0
2.5
3.0
3.5
4.0
4.5
Pulsed
V
DS
= 10 V
T
A
= 125°C
75°C
25°C
25°C
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
|
f
0.1
1
10
100
0.01
0.1
1
10
100
Pulsed
V
DS
= 10 V
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
-50
0
50
100
150
Pulsed
I
D
= 4.0 A
10 V
V
GS
= 4.0 V
4.5 V
0
10
20
30
40
50
0
2
4
6
8
10
Pulsed
I
D
= 4.0 A
R
D
T
ch
- Channel Temperature -
°
C
R
D
V
GS
- Gate to Source Voltage - V
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