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參數(shù)資料
| 型號(hào)： | UPA1807 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 63K |
| 代理商： | UPA1807 |
Data Sheet G16249EJ1V0DS
4
μ
PA1807
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
Pulsed
4.0 V
V
GS
= 10 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.0001
0.001
0.01
0.1
1
10
100
1
1.5
2
2.5
3
3.5
V
DS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
4
8
12
16
20
-50
0
50
100
150
I
D
= 6.0 A
Pulsed
10 V
4.5 V
V
GS
= 4.0 V
T
ch
- Channel Temperature - °C
R
D
0
4
8
12
16
20
0
2
4
6
8
10
Pulsed
I
D
= 6.0 A
V
GS
- Gate to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
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| UPA1807GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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