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參數(shù)資料
| 型號： | UPA1804GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | UPA1804GR-9JG |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998,1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1804
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D13868EJ1V0DS00 (1st edition)
June 1999 NS CP(K)
DESCRIPTION
This product is a switching device which can be driven
directly by a 4.5
V power source.
The
μ
PA1804 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 4.5 V power source
Low on-state resistance
R
DS(on)1
= 23 m
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 32 m
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1804GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
±8.0
A
I
D(pulse)
±32
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
1, 5, 8
2, 3, 6, 7:Source
4
:Drain
:Gate
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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